๐”– Bobbio Scriptorium
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Low pressure plasma immersion ion implantation of silicon

โœ Scribed by Zhi-Neng Fan; Qing-Chuan Chen; Chu, P.K.; Chung Chan


Book ID
114558638
Publisher
IEEE
Year
1998
Tongue
English
Weight
206 KB
Volume
26
Category
Article
ISSN
0093-3813

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Nitrogen plasma immersion ion implantation (PIII) was applied to Pebax thin films and plates using doses ranging from 5 โ€ข 10 14 to 10 17 ions/cm 2 at applied voltages of 5, 10, 20 and 30 kV. The analysis of the Pebax structure after implantation was performed using FTIR ATR, Raman, UV-vis transmissi