## Abstract In this letter, a low‐voltage and low‐power 3.5‐GHz low noise amplifier (LNA) is designed and fabricated using TSMC 0.18‐μm MS/RF complementary metal‐oxide‐semiconductor field effect transistor (CMOS) technology. The complementary current‐reused topology is utilized to achieve low dc po
Low power, GHz class ADC for broadband applications
✍ Scribed by T. Tauqeer; J. Sexton; J. Sly; M. Missous
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 289 KB
- Volume
- 11
- Category
- Article
- ISSN
- 1369-8001
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