Low-power and high-linearity SiGe HBT low-noise amplifier using IM3 cancellation technique
β Scribed by Chie-In Lee; Wei-Cheng Lin; Ji-Min Lin
- Book ID
- 113797910
- Publisher
- Elsevier Science
- Year
- 2012
- Tongue
- English
- Weight
- 995 KB
- Volume
- 91
- Category
- Article
- ISSN
- 0167-9317
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supply voltage, the broadband LNA exhibit a gain of 12.4 -12.7/ 17.3-18.6 dB, noise figure of Ο½5.5/4.9 dB, input return loss better than 15.7/12.8 dB, isolation better than 30/30 dB, IIP3 of Οͺ10.5/ Οͺ10 dBm and input P 1dB of Οͺ19.5/Οͺ18.5 dBm, respectively. Compared with previously reported UWB CMOS L
A 5.2-GHz monolithic low-power low-noise amplifier (LNA) with a quasi-cascode configuration using InGaP-GaAs HBT technology is reported for the first time. A state-of-the-art noise figure of 2.39 dB at 5.2 GHz is obtained among all bipolar LNAs with a fully on-chip input-matching network. The input
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