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Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric

✍ Scribed by Liu, Jiangwei; Liao, Meiyong; Imura, Masataka; Tanaka, Akihiro; Iwai, Hideo; Koide, Yasuo

Book ID
127278765
Publisher
Springer Science and Business Media LLC
Year
2014
Tongue
English
Weight
836 KB
Volume
4
Category
Article
ISSN
2045-2322

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This paper reports on the processing and the characterization of pentacene organic field effect transistors (OFETs) with a two-layer gate dielectric consisting of a polymer (PMMA) on a high-k oxide (Ta 2 O 5 ). This dielectric stack has been designed in view to combine low voltage operating devices,