✍ Scribed by J.A. Archer
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
## Abstract A new type of a microwave reflection amplifier with very low noise properties is presented. The proposed amplifier consists of a circulator and a one‐port circuit with the use of a transistor operating under negative resistance conditions. An expression for estimating the noise figure f
Neural networks are proposed for efficient temperature-dependent modeling of small-signal and noise performances of low-noise microwave transistors over a wide temperature range. The proposed models can be based either on neural networks only or on a combination of neural networks and empirical tran
inductive as the width ratio is increasing. The reason for this behaviour may be due to the change in nature of disturbed electromagnetic fields by the discontinuity from electric to magnetic with increasing width ratio. ## CONCLUSION The full-wave CAD model for generalised offset and gap discont
## Abstract The noise modeling of microwave FETs based on the noise‐wave representation of a transistor‐intrinsic circuit is considered. Frequency‐dependent noise‐wave temperatures are introduced as empirical model parameters and modeled using neural networks. In this way, online optimization in a