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Low-frequency resistance noise studies across the metal–insulator transition in silicon MOSFETs

✍ Scribed by J. Jaroszyński; Dragana Popović; T.M. Klapwijk

Book ID: 104427731
Publisher: Elsevier Science
Year: 2002
Tongue: English
Weight: 106 KB
Volume: 12
Category: Article
ISSN: 1386-9477
DOI: 10.1016/s1386-9477(01)00398-8

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## Abstract Contrary to some recent observations of a gradual increase of 1/__f__ ‐noise with decreasing carrier density in a 2DEG in Si and a 2DHG in GaAs, we have observed a non‐monotonic variation of noise power in a 2DEG in Si. We discuss the role of the following effects in the noise near the