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High-frequency four noise parameters of silicon-on-insulator-based technology MOSFET for the design of low-noise RF integrated circuits

✍ Scribed by Dambrine, G.; Raskin, J.-P.; Danneville, F.; Vanhoenackel Janvier, D.; Colinge, J.-P.; Cappy, A.

No coin nor oath required. For personal study only.

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