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Low frequency Raman scattering in amorphous materials: a-Ge, a-InSb, and a-Ge0.5Sn0.5

✍ Scribed by Jeffrey S. Lannin


Publisher
Elsevier Science
Year
1972
Tongue
English
Weight
394 KB
Volume
11
Category
Article
ISSN
0038-1098

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Dependence of dielectric properties on s
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The effects of structural characteristics on the dielectric properties of (Zn 1/3 A 2/3 ) 0.5 (Ti 1-x B x ) 0.5 O 2 (A = Nb 5+ , Ta 5+ , B = Ge 4+ , Sn 4+ ) (0.1 ≀ x ≀ 0.3) ceramics were investigated at microwave frequency. The sintered specimens showed solid solutions with a tetragonal rutile struc