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Low energy ion-beam post hydrogenation of phosphor implanted amorphous silicon films

โœ Scribed by R. Galloni; M. Ruth; A. Desalvo; Y.S. Tsuo


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
229 KB
Volume
170
Category
Article
ISSN
0921-4526

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Solid phase epitaxial regrowth of amorph
โœ S. Ruffell; I.V. Mitchell; P.J. Simpson ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 210 KB

Medium energy ion scattering (MEIS) has been used to study the kinetics of solid phase epitaxial regrowth (SPEG) of ultrathin amorphous layers created by room temperature implantation of 5 keV energy phosphorus ions into Si(1 0 0). P ion fluences ranged from 5e14 cm ร€2 up to 1e16 cm ร€2 , the associa