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Low energy Ar ion bombardment damage of Si, GaAs, and InP surfaces

โœ Scribed by R.Stanley Williams


Publisher
Elsevier Science
Year
1982
Tongue
English
Weight
249 KB
Volume
41
Category
Article
ISSN
0038-1098

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We have calculated the surface peak intensity of GaAs and InP in high-energy ion scattering by the Monte Carlo simulation method, assuming a variety of surface dynamics. Effects of thermal vibration, displacements of surface atoms, disorder of surface layer and the effect of multiple scattering of t