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Low carbon incorporation in GaAs grown by chemical beam epitaxy using unprecracked arsine, trimethylgallium and triethylgallium

โœ Scribed by Seong-ju Park; Jeong-rae Ro; Jae-ki Sim; El-hang Lee


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
450 KB
Volume
136
Category
Article
ISSN
0022-0248

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