## Abstract Pseudomorphic InGaAs/GaAs quantum wells (QWs) and selfβassembled InAs quantum dots (QDs) were grown by molecular beam epitaxy (MBE) on GaAs(11__n__)A substrates. Photoreflectance spectroscopy was employed to investigate the transitions in the heterostructures. The transitions in QWs hav
β¦ LIBER β¦
Longwave generation in laser structures based on InGaAs(N) quantum wells on GaAs substrates
β Scribed by V. A. Odnoblyudov; A. Yu. Egorov; A. R. Kovsh; V. V. Mamutin; E. V. Nikitina; Yu. M. Shernyakov; M. V. Maksimov; V. M. Ustinov
- Book ID
- 110134649
- Publisher
- SP MAIK Nauka/Interperiodica
- Year
- 2003
- Tongue
- English
- Weight
- 36 KB
- Volume
- 29
- Category
- Article
- ISSN
- 1063-7850
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