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LOCOS-induced stress effects on thin-film SOI devices

โœ Scribed by Cheng-Liang Huang; Soleimani, H.R.; Grula, G.J.; Sleight, J.W.; Villani, A.; Ali, H.; Antoniadis, D.A.

Book ID
114536767
Publisher
IEEE
Year
1997
Tongue
English
Weight
252 KB
Volume
44
Category
Article
ISSN
0018-9383

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TFSOI (Thin-Film Silicon-On-Insulator) technology has made significant progress recently. In this work, the titanium SALICIDE (Self-Aligned siLICIDE) process has been studied, optimized and applied on a CMOS-compatible TFSOI technology for low-voltage, low-power microwave applications. The gate shee