Study on titanium salicide process for thin-film SOI devices

✍ Scribed by Jian Chen; Jean-Pierre Colinge

• Book ID: 104306209
• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 321 KB
• Volume: 33
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(96)00044-5

✦ Synopsis

TFSOI (Thin-Film Silicon-On-Insulator) technology has made significant progress recently. In this work, the titanium SALICIDE (Self-Aligned siLICIDE) process has been studied, optimized and applied on a CMOS-compatible TFSOI technology for low-voltage, low-power microwave applications. The gate sheet resistance and total source/drain series resistance of a TFSOI NMOSFET with a 80 nm thick active silicon layer are 6.2 1)/square and 700 ~.lxm, respectively, with a 30 nm thick titanium disilicide on both the gate and source/drain areas. The maximum oscillation frequency, Jm,x, of a 0.75 ~m TFSOI NMOSFET fabricated with this technology is equal to 11 GHz for a supply voltage of 0.9 V.