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Local electronic properties of AlGaN/GaN heterostructures probed by scanning capacitance microscopy

✍ Scribed by K. V. Smith; E. T. Yu; J. M. Redwing; K. S. Boutros


Book ID
107452416
Publisher
Springer US
Year
2000
Tongue
English
Weight
331 KB
Volume
29
Category
Article
ISSN
0361-5235

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## Abstract Transport properties of the two‐dimensional electron gas in AlGaN/GaN heterostructures grown by ammonia molecular‐beam epitaxy are experimentally investigated. Conventional Hall and Shubnikov–de Haas measurements as well as investigations of quantum transport phenomena are reported. It