Lithography simulation with aerial image — Variable threshold resist model

✍ Scribed by John Randall; Hareen Gangala; Alexander Tritchkov

• Book ID: 104306530
• Publisher: Elsevier Science
• Year: 1999
• Tongue: English
• Weight: 466 KB
• Volume: 46
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(99)00015-5

✦ Synopsis

This paper explores the concept of a variable threshold resist model (VTRM) where the model is trained with data from a specific resist process, and may be applied to lithography simulation for that resist process with a wide variety of optical exposure conditions. This type of simulation is based on aerial image simulation and the application of a simple algebraic formula. It is therefore, very fast and applicable to a wide variety of simulation applications. We have trained the model with the 248nm resists TOK TDUR022 and Shipley UV6. In both cases the model does a good job of capturing most resist dynamics over a wide range of dose, critical dimension (CD), pitch, focus, and partial coherence conditions.