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Liquid phase epitaxy and photoluminescence characterization of p-type GaSb layers grown from Bi based melts

โœ Scribed by P. Gladkov; E. Monova; J. Weber


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
419 KB
Volume
146
Category
Article
ISSN
0022-0248

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Photoluminescence measurements of GaAs g
โœ M. Ciorga; L. Bryja; J. Misiewicz; R. Paszkiewicz; M. Panek; B. Paszkiewicz; M. ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 102 KB ๐Ÿ‘ 1 views

Thick, intentionally undoped GaAs epitaxial layers grown by LPE from Ga-Bi solution with different contents of Bi in liquid solvent (from 0 to 82 at.%Bi) were studied by photoluminescence (PL) at temperature T 2 K. The dependence of the photoluminescence spectrum on the content of Bi in solution was