A c-axis orientated aluminium nitride (AlN) film on a 128 โข Y-X lithium niobate (LiNbO 3 ) surface acoustic wave (SAW) device which exhibit a large electromechanical coupling coefficient (k 2 ) and a high SAW velocity property, is needed for future communication applications. In this study, a c-axis
โฆ LIBER โฆ
LiNbO3/p+n diode surface acoustic wave memory correlator
โ Scribed by Chao Zhang; Yongan Shui; Jianhua Yin
- Book ID
- 105655820
- Publisher
- SP Science China Press
- Year
- 1997
- Tongue
- English
- Weight
- 600 KB
- Volume
- 40
- Category
- Article
- ISSN
- 1006-9321
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The authors report surface-acoustic-wave-driven luminescence from a lateral p-n junction formed by molecular-beam epitaxy regrowth of a modulation doped GaAs/AlGaAs quantum well on a patterned GaAs substrate. Pulsed techniques are used to isolate the surface-acoustic-wave-driven emission from any em