Selective epitaxial growth of Ge and SiG
Selective epitaxial growth of Ge and SiGe using Si2H6 gas and Ge solid source molecular beam epitaxy
โ
Hiroyuki Wado; Tadami Shimizu; Seiji Ogura; Makoto Ishida; Tetsuro Nakamura
๐
Article
๐
1995
๐
Elsevier Science
๐
English
โ 445 KB