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Limitations of interface sharpness in a-Si:H/a-SiC:H multilayers

โœ Scribed by R. Schwarz; T. Fischer; P. Hanesch; T. Muschik; J. Kolodzey; H. Cerva; H.L. Meyerheim; B.M.U. Scherzer


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
544 KB
Volume
50
Category
Article
ISSN
0169-4332

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Induced defects in a-Si:H/a-SiNx:H multi
โœ W.Z. Gu; Z.C. Wang; M.X. Sun ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 125 KB

The induced defects and their distribution in a-Si:H/a-SiN x :H multilayers are determined using an electromagnetic technique (EMT) and positron annihilation technique (PAT). It is found that the distributions of the induced defects in the interface regions on both sides of the a-Si:H sublayer are a