Light from Si via dislocation loops

✍ Scribed by Kevin P. Homewood; Manon A. Lourenço

• Book ID: 104417251
• Publisher: Elsevier Science
• Year: 2005
• Tongue: English
• Weight: 847 KB
• Volume: 8
• Category: Article
• ISSN: 1369-7021
• DOI: 10.1016/s1369-7021(04)00677-7

✦ Synopsis

We give a brief overview of the development and recent progress of a new technology, silicon dislocation-engineered light-emitting diodes (LEDs).

The dislocation-engineering method enables the development of light emitters in conventional silicon technology. Key and probably unique to this approach is its genuine and total compatibility with the standard ultra-large-scale integration (ULSI) process used to produce complex computer chips.