Trapping of aluminium by dislocation loops in Si
✍ Scribed by Ch Ortiz; D Mathiot; D Alquier; Ch Dubois; R Jérisian
- Book ID
- 114164421
- Publisher
- Elsevier Science
- Year
- 2001
- Tongue
- English
- Weight
- 99 KB
- Volume
- 178
- Category
- Article
- ISSN
- 0168-583X
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Thin foils of quenched aluminium have been annealed at hydrostatic pressures up to 60 kb and temperatures up to 289°C. Observation by transmission electron microscopy before and after treatment has enabled a determination of temperature ranges within which dislocation loops anneal out at different p