Lifetime of photoexcited carriers in modulation-doped quantum dot infrared photodetectors
β Scribed by Seung-Woong Lee; Kazuhiko Hirakawa
- Publisher
- Elsevier Science
- Year
- 2002
- Tongue
- English
- Weight
- 170 KB
- Volume
- 13
- Category
- Article
- ISSN
- 1386-9477
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π SIMILAR VOLUMES
We present the carrier relaxation of modulation-doped InAs=GaAs quantum dots depending on the excitation wavelength and modulation-doping concentration by using the time-resolved spectroscopy. At the excitation below GaAs band gap, the relaxation processes become very slow, implying the observation
In this paper the intersubband optical transitions in quantum dots are studied. Theoretical calculations of peak wavelengths and oscillator strengths of the transitions from the bound to ΓΏrst and second excited states were made for the InxGa1-xAs=GaAs and InAs=AlxGa 1-x As systems. The results show
## Abstract Quantum dot infrared photodetectors (QDIPs) have made significant progress after their early demonstration about a decade ago. We review the progress made by QDIP technology over the last few years and compare QDIPs with quantum well infrared photodetectors (QWIPs). It is shown that the