𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Review of current progress in quantum dot infrared photodetectors

✍ Scribed by A.V. Barve; S.J. Lee; S.K. Noh; S. Krishna


Publisher
John Wiley and Sons
Year
2009
Tongue
English
Weight
997 KB
Volume
4
Category
Article
ISSN
1863-8880

No coin nor oath required. For personal study only.

✦ Synopsis


Abstract

Quantum dot infrared photodetectors (QDIPs) have made significant progress after their early demonstration about a decade ago. We review the progress made by QDIP technology over the last few years and compare QDIPs with quantum well infrared photodetectors (QWIPs). It is shown that the performance of QDIPs has significantly improved using novel architectures such as dots‐in‐a‐well designs, and large‐format (1 K Γ— 1 K) focal plane arrays have been realized. However, even though there are significant reports of performance parameters better than QWIPs from single‐pixel devices, QDIP‐based focal plane arrays are still a factor of 3–5 worse in terms of noise equivalent temperature difference. We discuss the reasons for the performance gap and the key scientific and technological challenges that need to be addressed to achieve the full potential of QD‐based technology.


πŸ“œ SIMILAR VOLUMES


The role of sequential tunnelling in the
✍ N.E.I Etteh; P Harrison πŸ“‚ Article πŸ“… 2001 πŸ› Elsevier Science 🌐 English βš– 150 KB

A quantum mechanical approach is taken to investigate the contribution of sequential tunnelling as a component of the dark current in quantum well infrared photodetectors (QWIPs). Calculations are performed on three different experimentally reported QWIP devices made for different detection waveleng

Progress in Growth and Physics of Nitrid
✍ Arakawa, Y. πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 355 KB πŸ‘ 1 views

We reviewed our recent progress in growth and optical properties of GaN-based quantum dots (QDs). After briefly discussing the impact of GaN-based QDs on the improvement of threshold current characteristics, we show the growth of InGaN/GaN self-assembled QDs with the average diameter of the QDs as s

Infrared spectroscopy of intraband trans
✍ Wen-Gang Wu; Jian-Lin Liu; Yin-Sheng Tang; Kang L. Wang πŸ“‚ Article πŸ“… 1999 πŸ› Elsevier Science 🌐 English βš– 342 KB

We report the study of infrared spectroscopy of intraband transitions in Ge/Si quantum dot superlattices. The superlattices, which were grown on (001) oriented Si substrates by a solid source molecular beam epitaxy system, are composed mainly of 20 or 30 periods of Ge dot layers and Si spacer films.

Boundary conditions of continuum states
✍ Y. Fu πŸ“‚ Article πŸ“… 2001 πŸ› Elsevier Science 🌐 English βš– 239 KB

We study the optical transition between bound-to-continuum states in a GaAs/AlGaAs multiple quantum well infrared photodetector (QWIP) by analyzing three possible boundary conditions for the continuum states. Comparing with experimental results, it has been suggested that the Bloch-state boundary co