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Progress in Growth and Physics of Nitride-Based Quantum Dots

✍ Scribed by Y. Arakawa; T. Someya; K. Tachibana

Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
678 KB
Volume
224
Category
Article
ISSN
0370-1972

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πŸ“œ SIMILAR VOLUMES

Progress in Growth and Physics of Nitrid
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We reviewed our recent progress in growth and optical properties of GaN-based quantum dots (QDs). After briefly discussing the impact of GaN-based QDs on the improvement of threshold current characteristics, we show the growth of InGaN/GaN self-assembled QDs with the average diameter of the QDs as s

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Reflection high energy electron diffraction (RHEED) is applied to analyze the particular stages of island formation during the molecular beam epitaxy (MBE) of pseudomorphical CdSe/ZnSe on GaAs(001) using an elevated substrate temperature of T S ΒΌ 400 C. Plan-view transmission electron microscopy (TE

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Employing two different growth methods: standard molecular beam epitaxy (MBE) and lowtemperature atomic layer epitaxy (ALE) with subsequent annealing, we have obtained highquality quantum dot structures consisting of CdSe embedded in ZnSe. Single dot emission lines are observed in micro-luminescence