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Lengthening of the photoluminescence decay time of InAs quantum dots coupled to InGaAs∕GaAs quantum well

✍ Scribed by Mazur, Yu. I.; Liang, B. L.; Wang, Zh. M.; Tarasov, G. G.; Guzun, D.; Salamo, G. J.; Mishima, T. D.; Johnson, M. B.


Book ID
120338725
Publisher
American Institute of Physics
Year
2006
Tongue
English
Weight
350 KB
Volume
100
Category
Article
ISSN
0021-8979

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Photoluminescence studies of self-assemb
✍ X. Mu; Y. J. Ding; Z. Wang; G. J. Salamo 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 398 KB

We have characterized self-assembled InAs quantum dots grown on the top of a single InGaAs/GaAs quantum well (QD's:QW) by measuring photoluminescence (PL) spectra as an effective technique. We have found that the linewidths of the PL peaks for the QD's:QW are narrower than that for the InAs quantum