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Leakage power bounds in CMOS digital technologies

✍ Scribed by Ferre, A.; Figueras, J.


Book ID
118698260
Publisher
IEEE
Year
2002
Tongue
English
Weight
384 KB
Volume
21
Category
Article
ISSN
0278-0070

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Leakage currents are gaining importance as design parameters in nanometer CMOS technologies. A novel leakage current estimation method, which takes into account the dependency of leakage mechanisms, is proposed for general CMOS complex gates, including non-series-parallel transistor arrangements, no