✦ LIBER ✦

Layer-by-layer nucleation mechanism for quantum dot formation in strained heteroepitaxy

✍ Scribed by Xiang, Ruoxi; Lung, M. T.; Lam, Chi-Hang

Book ID: 125811041
Publisher: The American Physical Society
Year: 2010
Tongue: English
Weight: 176 KB
Volume: 82
Category: Article
ISSN: 1063-651X
DOI: 10.1103/PhysRevE.82.021601

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

IIâVI quantum dot formation induced by

IIâVI quantum dot formation induced by surface energy change of a strained layer

✍ Tinjod, F.; Gilles, B.; Moehl, S.; Kheng, K.; Mariette, H. 📂 Article 📅 2003 🏛 American Institute of Physics 🌐 English ⚖ 665 KB

A scanning tunnelling microscopy study o

A scanning tunnelling microscopy study of local surface modifications induced by misfit dislocation formation in strained-layer heteroepitaxy

✍ G. Springholz; G. Bauer 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 722 KB

Mechanism for the formation of 90Â° disl

Mechanism for the formation of 90Â° dislocations in high-mismatch (100) semiconductor strained-layer systems

✍ Gosling, T. J. 📂 Article 📅 1993 🏛 American Institute of Physics 🌐 English ⚖ 896 KB

Optical transitions in type-II InAs∕GaAs

Optical transitions in type-II InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer

✍ Jin, C. Y.; Liu, H. Y.; Zhang, S. Y.; Jiang, Q.; Liew, S. L.; Hopkinson, M.; Bad 📂 Article 📅 2007 🏛 American Institute of Physics 🌐 English ⚖ 550 KB

InAs/GaNAs strain-compensated quantum do

InAs/GaNAs strain-compensated quantum dots stacked up to 50 layers for use in high-efficiency solar cell

✍ Ryuji Oshima; Ayami Takata; Yasushi Shoji; Kouichi Akahane; Yoshitaka Okada 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 805 KB

Formation process for and strain effect

Formation process for and strain effect in InAs quantum dots grown on GaAs substrates by using molecular beam epitaxy

✍ M.D. Kim; D.H. Lee; T.W. Kim; S.G. Kim 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 522 KB