Antimony incorporation in InAs quantum d
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J. Rihani; V. Sallet; H.J. Christophe; M. Oueslati; R. Chtourou
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Article
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2008
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Elsevier Science
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English
โ 272 KB
We have grown InAs(Sb) quantum dots (QDs) on GaAs (0 0 1) substrates by molecular beam epitaxy (MBE) using two different antimony exposures (F Sb ). Atomic force microscopy (AFM) and photoluminescence (PL) spectroscopy were carried out to investigate the dot size evolution as function of the incorpo