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Formation process for and strain effect in InAs quantum dots grown on GaAs substrates by using molecular beam epitaxy

โœ Scribed by M.D. Kim; D.H. Lee; T.W. Kim; S.G. Kim


Book ID
108269248
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
522 KB
Volume
130
Category
Article
ISSN
0038-1098

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Antimony incorporation in InAs quantum d
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We have grown InAs(Sb) quantum dots (QDs) on GaAs (0 0 1) substrates by molecular beam epitaxy (MBE) using two different antimony exposures (F Sb ). Atomic force microscopy (AFM) and photoluminescence (PL) spectroscopy were carried out to investigate the dot size evolution as function of the incorpo