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Doping effect on photocarrier lifetime in InAs quantum dots with strain-relaxed InGaAs barriers grown by molecular beam epitaxy

✍ Scribed by Takahiro Kitada; Akari Mukaijo; Tomoya Takahashi; Takuya Mukai; Ken Morita; Toshiro Isu

Publisher: Elsevier Science
Year: 2010
Tongue: English
Weight: 439 KB
Volume: 42
Category: Article
ISSN: 1386-9477
DOI: 10.1016/j.physe.2009.11.015

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