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Optical transitions in type-II InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer

✍ Scribed by Jin, C. Y.; Liu, H. Y.; Zhang, S. Y.; Jiang, Q.; Liew, S. L.; Hopkinson, M.; Badcock, T. J.; Nabavi, E.; Mowbray, D. J.

Book ID: 125472729
Publisher: American Institute of Physics
Year: 2007
Tongue: English
Weight: 550 KB
Volume: 91
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2752778

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