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Tuning the structural and optical properties of 1.3-μm InAs/GaAs quantum dots by a combined InAlAs and GaAs strained buffer layer

✍ Scribed by Liu, H. Y.; Hopkinson, M.


Book ID
120734943
Publisher
American Institute of Physics
Year
2003
Tongue
English
Weight
380 KB
Volume
82
Category
Article
ISSN
0003-6951

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We report the effects of accumulated strain by stacking on the surface and optical properties of stacked 1.3 mm InAs/GaAs quantum dot (QD) structures grown by MOCVD. It is found that the surface of the stacked QD structures becomes more and more undulated with stacking, due to the increased strain i