Layer-by-layer deposition of epitaxial TiN–CrN multilayers on MgO(0 0 1) by pulsed laser ablation
✍ Scribed by Kei Inumaru; Takayoshi Ohara; Kazuma Tanaka; Shoji Yamanaka
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 129 KB
- Volume
- 235
- Category
- Article
- ISSN
- 0169-4332
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
The substrates used in the experiment were (1 1 1)-oriented ntype Ge wafers with the resistivity of 2-5 V cm. NHO ceramic
Crystalline magnesium oxide (MgO) (1 1 1), 20 A ˚thick, was grown by molecular beam epitaxy (MBE) on hydrogen cleaned hexagonal silicon carbide (6H-SiC). The films were further heated to 740 8C and 650 8C under different oxygen environments in order to simulate processing conditions for subsequent f
The potential for enhancement of Si-based devices by growth of SiC films on large-diameter Si wafers is hampered by the very high temperatures (close to the Si melting temperature) that are needed for growth and doping by the existing techniques. Here, we present a unique doping method for growth of