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Lattice location of phosphorus in n-type homoepitaxial diamond films grown by chemical-vapor deposition

✍ Scribed by Hasegawa, Masataka; Teraji, Tokuyuki; Koizumi, Satoshi

Book ID
120002148
Publisher
American Institute of Physics
Year
2001
Tongue
English
Weight
352 KB
Volume
79
Category
Article
ISSN
0003-6951

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Electron paramagnetic resonance study of
Electron paramagnetic resonance study of phosphorus-doped n-type homoepitaxial diamond films grown by chemical vapor deposition
✍ Katagiri, M. ;Isoya, J. ;Koizumi, S. ;Kanda, H. πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 220 KB

## Abstract Electron paramagnetic resonance technique has been applied to identify the microscopic origin of the n‐type conductivity in phosphorus‐doped {111}‐homoepitaxial diamond films grown by chemical vapor deposition. The NIMS‐1 center having the __D__ ~2d~ symmetry with __g__ ~||~ = 1.9983, _