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Phonon-assisted electronic transitions in phosphorus-doped n-type chemical vapor deposition diamond films

✍ Scribed by Haenen, K; Meykens, K; Nesládek, M; Knuyt, G; Stals, L.M; Teraji, T; Koizumi, S; Gheeraert, E


Book ID
123044645
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
114 KB
Volume
10
Category
Article
ISSN
0925-9635

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## Abstract Electron paramagnetic resonance technique has been applied to identify the microscopic origin of the n‐type conductivity in phosphorus‐doped {111}‐homoepitaxial diamond films grown by chemical vapor deposition. The NIMS‐1 center having the __D__ ~2d~ symmetry with __g__ ~||~ = 1.9983, _