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Lateral insulated gate bipolar transistor (LIGBT) structure based on partial isolation SOI technology

✍ Scribed by Udrea, F.; Milne, W.; Popescu, A.

Book ID: 120077370
Publisher: The Institution of Electrical Engineers
Year: 1997
Tongue: English
Weight: 527 KB
Volume: 33
Category: Article
ISSN: 0013-5194
DOI: 10.1049/el:19970587

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