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Lasing characteristics of GaSb∕GaAs self-assembled quantum dots embedded in an InGaAs quantum well

✍ Scribed by Tatebayashi, J.; Khoshakhlagh, A.; Huang, S. H.; Balakrishnan, G.; Dawson, L. R.; Huffaker, D. L.; Bussian, D. A.; Htoon, H.; Klimov, V.


Book ID
121339722
Publisher
American Institute of Physics
Year
2007
Tongue
English
Weight
606 KB
Volume
90
Category
Article
ISSN
0003-6951

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Photoluminescence studies of self-assemb
✍ X. Mu; Y. J. Ding; Z. Wang; G. J. Salamo 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 398 KB

We have characterized self-assembled InAs quantum dots grown on the top of a single InGaAs/GaAs quantum well (QD's:QW) by measuring photoluminescence (PL) spectra as an effective technique. We have found that the linewidths of the PL peaks for the QD's:QW are narrower than that for the InAs quantum