A sample preparation technique based on photochemical etching (PCE) is described for cross-sectional transmission electron microscopy (XTEM) of n-type compound semiconductors. XTEM samples of an InGaAsPAnP single-layer structure, prepared by using a moderately focused laser beam and Br2-methanol sol
✦ LIBER ✦
Laser-stimulated etching of n-type semiconductors
✍ Scribed by V. Švorčík; V. Rybka; V. Myslík
- Publisher
- Elsevier Science
- Year
- 1988
- Tongue
- English
- Weight
- 335 KB
- Volume
- 144
- Category
- Article
- ISSN
- 0009-2614
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