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Impact of semiconductors material on IR Laser Stimulation signal

✍ Scribed by A. Firiti; F. Beaudoin; G. Haller; P. Perdu; D. Lewis; P. Fouillat


Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
760 KB
Volume
45
Category
Article
ISSN
0026-2714

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✦ Synopsis


In failure analysis laboratory, infrared laser stimulation techniques are more and more used for performing accurate defect localization on IC surface. Signatures obtained on metallic elements are well known, but weak data are available on signatures of semiconductors elements. Our investigations consist of studying impact of semiconductors materials on IR Laser Stimulation signal during a failure analysis. Frontside and backside Thermal Laser Stimulation (TLS) experiments were performed on n+/p+ diffusion and polycrystalline resistors from 0.18Β΅m technology, both silicided (CoSi 2 ) and unsilicided. Experimental results are presented and discussed for different W/L ratios. The impact of different semiconductors materials on TLS measurements is discussed and verified by experiment.


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## Abstract ## Background and Objectives Previous studies have shown that during the laser irradiation of dentin and bone, thermal damage can be minimized by using a highly absorbed laser wavelength, laser pulses shorter than the thermal relaxation time of the deposited laser energy at that wavele