✦ LIBER ✦
Brief communication:XTEM sample preparation technique for n-type compound semiconductors using photochemical etching
✍ Scribed by Tanaka, Shigeyasu; Fujii, Hideki; Hibino, Michio
- Publisher
- John Wiley and Sons
- Year
- 1996
- Tongue
- English
- Weight
- 439 KB
- Volume
- 35
- Category
- Article
- ISSN
- 1059-910X
No coin nor oath required. For personal study only.
✦ Synopsis
A sample preparation technique based on photochemical etching (PCE) is described for cross-sectional transmission electron microscopy (XTEM) of n-type compound semiconductors. XTEM samples of an InGaAsPAnP single-layer structure, prepared by using a moderately focused laser beam and Br2-methanol solution, gave high quality, damage-free XTEM images. The PCE technique is applicable to other n-type compound semiconductors.