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Laser spectroscopy of the IBr A3Π1 ← X1Σ+ system by use of a GaAs semiconductor laser

✍ Scribed by Masao Suzuki; Tsuyoshi Fujiwara


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
211 KB
Volume
133
Category
Article
ISSN
0022-2852

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Laser Spectroscopy of the A3Π1 ← X1Σ+ Sy
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The electronic absorption spectra of the \(A^{3} \Pi_{1} \leftarrow X^{1} \Sigma^{+}\)system of iodine bromides \({ }^{79}{ }^{79} \mathrm{Br}\) and \({ }^{81} \mathrm{Br}\) species were investigated in the region from 11780 to \(12500 \mathrm{~cm}^{-1}\) using a \(\mathrm{GaAs}\) semiconductor lase

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The vibrotational absorption spectra of the A ← X electronic transition of I 79/81 Br were measured in the 11 330-to 13 220-cm -1 region using a Ti:sapphire ring laser. The P-, Q-, and R-branch lines of the rotational states from J = 10 to 100 belonging to the v ← v = (3∼20) ← (1∼6) bands were assig

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The Doppler-limited absorption spectrum of the vibrotational lines in the A 3 P 1u R X 1 S / g system of I 2 was measured in the region from 11,200 to 12,450 cm 01 using a Ti:sapphire ring laser. The Q-branch lines of J Å 10 to 100 belonging to the £ R £Љ Å (26 Ç 45) R 0Љ, (19 Ç 45) R 1Љ, (16 Ç 45)