Laser performance of Nd:LaB3O6cleavage microchips passively Q-switched with a Cr4+:YAG saturable absorber
โ Scribed by Y.J. Chen; X.H. Gong; Y.F. Lin; Z.D. Luo; Q.G. Tan; Y.D. Huang
- Publisher
- Springer
- Year
- 2006
- Tongue
- English
- Weight
- 540 KB
- Volume
- 83
- Category
- Article
- ISSN
- 0721-7269
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๐ SIMILAR VOLUMES
By using xenon ash lamp as pump source and Cr 4+ :YAG as passive Q-switcher, we have performed the Q-switched laser operation at 1:06 m with an Nd 3+ :NaY(WO4)2 (known as Nd:NYW) crystal. Meanwhile, the pulse width, the single pulse energy and the repetition rate under di erent small-signal transmis
By considering the Gaussian spatial distributions of the intracavity photon density and the initial populationinversion density, the coupled rate equations for a diode-pumped passively Q-switched and mode-locked (QML) laser with Cr 4+ :YAG saturable absorber are given. These coupled rate equations a
A laser-diode pumped passively Q-switched new type crystal Nd 3+ :NaY(WO 4 ) 2 (known as Nd:NYW) laser with Cr 4+ :YAG saturable absorber has been realized. The dependence of pulse repetition rate, pulse energy, pulse width, and peak power on pump power for different small-signal transmission of Cr