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Laser enhanced epitaxial growth of gallium arsenide from elemental arsenic

✍ Scribed by T. L. Chu; Shirley S. Chu; R. F. Green


Book ID
112816205
Publisher
Springer US
Year
1991
Tongue
English
Weight
516 KB
Volume
20
Category
Article
ISSN
0361-5235

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Institute of Semiconductor Physics, Siberian Branch of the Academy of Sciences of the USSR h'ovosibirsk 90, USSR ## Liquid Phase Epitaxial Growth of Undoped Gallium Arsenide from Bismuth and Gallium Melts Electrical properties of undoped GaAs layers grown from G a and Bi melts under identical con