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Laser deposited YBa2Cu3O7 films on silicon with yttria stabilized zirconia buffer layers

✍ Scribed by Freia Goerke

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
658 KB
Volume
245
Category
Article
ISSN
0921-4534

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A new type of buffer layer, based on Nb doped YBa2Cu307 material, has been used for high quality HTSC ultrathin film fabrication. This new material represents a dielectric continuum of YBa2NbO 6 phase with YBa2Cu307 phase inclusions. The later serve as nuclei while growing ultrathin YBa2Cu307 film o