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Laser chemical vapour deposition for microelectronics

✍ Scribed by Geoffroy Auvert


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
820 KB
Volume
86
Category
Article
ISSN
0169-4332

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Silicon oxide films have been deposited on silicon wafers at low temperature by irradiation of the substrates with an ArF (A = 193 nm) excimer laser beam in a SiH, and N20 atmosphere. A systematic study of the growth rate and properties of the films as a function of the processing parameters (gas co