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CO2-laser-induced chemical vapour deposition of TiB2

✍ Scribed by J. Elders; P.A. Quist; B. Rooswijk; J.D.W. van Voorst; J. van Nieuwkoop


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
808 KB
Volume
45
Category
Article
ISSN
0257-8972

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Silicon oxide films have been deposited on silicon wafers at low temperature by irradiation of the substrates with an ArF (A = 193 nm) excimer laser beam in a SiH, and N20 atmosphere. A systematic study of the growth rate and properties of the films as a function of the processing parameters (gas co