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Laser chemical processing for microelectronics [Book Review]

✍ Scribed by Ashby, C.I.H.

Book ID
117882217
Publisher
IEEE
Year
1990
Tongue
English
Weight
61 KB
Volume
26
Category
Article
ISSN
0018-9197

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The development of new gases for dry etching is important if submicron device geometries are to be realized. Gases which are currently in use for the various proce~\_\_sing steps associated with device fabrication include CF4, CF4/O2, SF6, CC14, and to a lesser extent NFa. It is this gas, NF3, which