The effect of laser fluence on the crystallization of amorphous silicon irradiated by a frequency-doubled Nd:YAG laser is studied both theoretically and experimentally. An effective numerical model is set up to predict the melting threshold and the optimized laser fluence for the crystallization of
โฆ LIBER โฆ
Laser-beam writing on amorphous chalcogenide films: crystallization kinetics and analysis of amorphizing energy
โ Scribed by Weiser, K.
- Book ID
- 121293856
- Publisher
- American Institute of Physics
- Year
- 1973
- Tongue
- English
- Weight
- 442 KB
- Volume
- 22
- Category
- Article
- ISSN
- 0003-6951
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