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Kinetics of amorphous phase formation and its isothermal crystallization in laser-quenched GeAl thin films

✍ Scribed by C.N. Afonso; F. Catalina; J. Solis


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
984 KB
Volume
7
Category
Article
ISSN
0921-5107

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✦ Synopsis


Pulsed laser irradiation is used to induce melting and rapid solidification of micron-sized areas of initially amorphous GeAI films. The kinetics of the laser-induced process are followed by using time-resolved optical techniques and the m&rostructures formed upon solidification are studied by transmission electron microscopy. The results show that, depending on the irradiation power, mainly amorphous or crystalline metastable phases are formed and conclusions related to the role of undercooling in their formation are achieved The laser-induced amorphous phase is found to be unstable and its isothermal crystallization at room temperature is ldnetically studied. It is found that crystallization is nucleated by aluminium and it is a diffusion-controlled process with a decreasing nucleation rate.