๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Large-scale charge storage by scanning capacitance microscopy

โœ Scribed by R.C. Barrett; C.F. Quate

Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
713 KB
Volume
42-44
Category
Article
ISSN
0304-3991

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

High-resolution scanning capacitance mic
High-resolution scanning capacitance microscopy by angle bevelling
โœ Filippo Giannazzo; Vito Raineri; Vittorio Privitera; Francesco Priolo ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 141 KB

Scanning capacitance microscopy was performed on bevelled samples to improve the resolution. The dependence of the reverse junction carrier spilling on the bevel angle has been investigated for P and B ion-implanted Si samples. We show an increase of this effect decreasing the bevel angle from 5844

Carrier concentration profiles in 6H-SiC
Carrier concentration profiles in 6H-SiC by scanning capacitance microscopy
โœ F. Giannazzo; P. Musumeci; L. Calcagno; A. Makhtari; V. Raineri ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 161 KB

We have used scanning capacitance microscopy to determine two-dimensional carrier distributions in 6H-SiC on both epitaxial layers and implanted samples. Measurements were carried out on cross-sections using metal-covered Si tips. The sample preparation, surface passivation and tip selection have be